Dataram DRL2666E/16GB memory module 1 x 16 GB DDR4 288-pin DIMM ECC
- Bi-directional Differential Data Strobe signals
- Per DRAM Addressability is supported
- Write CRC is supported at all speed grades
- DBI (Data Bus Inversion) is supported(x8 only)
- CA parity (Command/Address Parity) mode is supported
- Supports ECC error correction and detection
- 16 internal banks
- SDRAM Addressing (Row/Col/BG/BA): 16/10/2/2
- Fully RoHS Compliant
DRL2666E/16GB is an Unbuffered 2Gx72 memory module, which conforms to JEDEC's
DDR4-2666, PC4-2666 standard. The assembly is Dual-Rank. Each rank is comprised of nine
1Gx8 DDR4-2666 SDRAMs. One EEPROM is used for Serial Presence Detect. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C.
| Features | |
|---|---|
| Memory voltage | 1.2 V |
| Memory ranking | 2 |
| CAS latency | 19 |
| ECC | Yes |
| Memory form factor | 288-pin DIMM |
| Component for | PC/Server |
| Memory clock speed | 2666 MHz |
| Internal memory type | DDR4 |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Buffered memory type | Unregistered (unbuffered) |
| Technical details | |
|---|---|
| Compliance certificates | RoHS |
- Bi-directional Differential Data Strobe signals
- Per DRAM Addressability is supported
- Write CRC is supported at all speed grades
- DBI (Data Bus Inversion) is supported(x8 only)
- CA parity (Command/Address Parity) mode is supported
- Supports ECC error correction and detection
- 16 internal banks
- SDRAM Addressing (Row/Col/BG/BA): 16/10/2/2
- Fully RoHS Compliant
DRL2666E/16GB is an Unbuffered 2Gx72 memory module, which conforms to JEDEC's
DDR4-2666, PC4-2666 standard. The assembly is Dual-Rank. Each rank is comprised of nine
1Gx8 DDR4-2666 SDRAMs. One EEPROM is used for Serial Presence Detect. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C.
| Features | |
|---|---|
| Memory voltage | 1.2 V |
| Memory ranking | 2 |
| CAS latency | 19 |
| ECC | Yes |
| Memory form factor | 288-pin DIMM |
| Component for | PC/Server |
| Memory clock speed | 2666 MHz |
| Internal memory type | DDR4 |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Buffered memory type | Unregistered (unbuffered) |
| Technical details | |
|---|---|
| Compliance certificates | RoHS |
Original: $758.56
-70%$758.56
$227.57Description
- Bi-directional Differential Data Strobe signals
- Per DRAM Addressability is supported
- Write CRC is supported at all speed grades
- DBI (Data Bus Inversion) is supported(x8 only)
- CA parity (Command/Address Parity) mode is supported
- Supports ECC error correction and detection
- 16 internal banks
- SDRAM Addressing (Row/Col/BG/BA): 16/10/2/2
- Fully RoHS Compliant
DRL2666E/16GB is an Unbuffered 2Gx72 memory module, which conforms to JEDEC's
DDR4-2666, PC4-2666 standard. The assembly is Dual-Rank. Each rank is comprised of nine
1Gx8 DDR4-2666 SDRAMs. One EEPROM is used for Serial Presence Detect. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C.
| Features | |
|---|---|
| Memory voltage | 1.2 V |
| Memory ranking | 2 |
| CAS latency | 19 |
| ECC | Yes |
| Memory form factor | 288-pin DIMM |
| Component for | PC/Server |
| Memory clock speed | 2666 MHz |
| Internal memory type | DDR4 |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Buffered memory type | Unregistered (unbuffered) |
| Technical details | |
|---|---|
| Compliance certificates | RoHS |
